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Paper Details

Engineering of impact ionization characteristics in In<sub>0.53</sub>Ga<sub>0.47</sub>As/Al<sub>0.48</sub>In<sub>0.52</sub>As superlattice avalanche photodiodes on InP substrate.
Sci Rep
4
2020
Author NameAffiliation
Sanjay KrishnaThe Ohio State University
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Release 1.2